ELECTRICAL CONDUCTION VIA SLOW SURFACE STATES ON SEMICONDUCTORS

[1] BERNSTEIN H, 1955, PHYS REV, V98, P1566

[2] N-TYPE SURFACE CONDUCTIVITY ON P-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1953, 91 (03): : 518 - 527

[3] PHOTON EMISSION FROM AVALANCHE BREAKDOWN IN SILICON [J]. PHYSICAL REVIEW, 1956, 102 (02): : 369 - 376

[4] NATURE OF THE WATER-VAPOR-INDUCED EXCESS CURRENT ON GROWN GERMANIUM PARA-NORMAL-JUNCTIONS [J]. PHYSICAL REVIEW, 1955, 99 (06): : 1899 - 1900

[5] ERIKSEN, 1957, J APPL PHYS, V28, P133

[6] SOME EXPERIMENTS ON, AND A THEORY OF, SURFACE BREAKDOWN [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (03) : 299 - 306

[7] HIGH-FREQUENCY RELAXATION PROCESSES IN THE FIELD-EFFECT EXPERIMENT [J]. PHYSICAL REVIEW, 1957, 107 (02): : 478 - 487

[8] GREEN, 1957, SEMICONDUCTOR SURFAC, P349

[9] BAND STRUCTURE IN DISORDERED ALLOYS AND IMPURITY SEMICONDUCTORS [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1953, 57 (08) : 840 - 848

[10] RELAXATION TIME OF SURFACE STATES ON GERMANIUM [J]. PHYSICAL REVIEW, 1956, 103 (03): : 534 - 540

[1] BERNSTEIN H, 1955, PHYS REV, V98, P1566

[2] N-TYPE SURFACE CONDUCTIVITY ON P-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1953, 91 (03): : 518 - 527

[3] PHOTON EMISSION FROM AVALANCHE BREAKDOWN IN SILICON [J]. PHYSICAL REVIEW, 1956, 102 (02): : 369 - 376

[4] NATURE OF THE WATER-VAPOR-INDUCED EXCESS CURRENT ON GROWN GERMANIUM PARA-NORMAL-JUNCTIONS [J]. PHYSICAL REVIEW, 1955, 99 (06): : 1899 - 1900

[5] ERIKSEN, 1957, J APPL PHYS, V28, P133

[6] SOME EXPERIMENTS ON, AND A THEORY OF, SURFACE BREAKDOWN [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (03) : 299 - 306

[7] HIGH-FREQUENCY RELAXATION PROCESSES IN THE FIELD-EFFECT EXPERIMENT [J]. PHYSICAL REVIEW, 1957, 107 (02): : 478 - 487

[8] GREEN, 1957, SEMICONDUCTOR SURFAC, P349

[9] BAND STRUCTURE IN DISORDERED ALLOYS AND IMPURITY SEMICONDUCTORS [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1953, 57 (08) : 840 - 848

[10] RELAXATION TIME OF SURFACE STATES ON GERMANIUM [J]. PHYSICAL REVIEW, 1956, 103 (03): : 534 - 540