SODIUM DISTRIBUTION IN THERMAL OXIDE ON SILICON BY RADIOCHEMICAL AND MOS ANALYSIS

被引：114

作者：

YON, E

KO, WH

KUPER, AB

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1966年 / ED13卷 / 02期

关键词：

D O I：

10.1109/T-ED.1966.15680

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：276 / +

页数：1

共 14 条

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[9] ION TRANSPORT PHENOMENA IN INSULATING FILMS [J].

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