HYDROGEN-INDUCED SURFACE SPACE-CHARGE REGIONS IN OXIDE-PROTECTED SILICON

被引：17

作者：

OLMSTEAD, J

SCOTT, J

KUZNETZOFF, P

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1965年 / ED12卷 / 03期

关键词：

D O I：

10.1109/T-ED.1965.15464

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：104 / +

页数：1

共 13 条

[1] STABILIZATION OF SILICON SURFACES BY THERMALLY GROWN OXIDES [J].

ATALLA, MM ;

TANNENBAUM, E ;

SCHEIBNER, EJ .

BELL SYSTEM TECHNICAL JOURNAL, 1959, 38 (03) :749-783

[2]

BLUM J, 1964, MAY EL SOC M TOR

[3]

EDAGAWA H, 1963, JPN J APPL PHYS, V2, P814

[4] HIGH-GAIN MICROPOWER TRANSISTORS [J].

GIULIANO, MN ;

GOINS, EW ;

MCLOUSKI, RM ;

LEINKRAM, CZ .

PROCEEDINGS OF THE IEEE, 1964, 52 (06) :712-+

[5] SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR [J].

HOFSTEIN, SR ;

HEIMAN, FP .

PROCEEDINGS OF THE IEEE, 1963, 51 (09) :1190-&

[6]

IHANTOLA HKJ, 1961, 16611 STANDF EL LABS

[7]

KAHNG D, 1960, JUN IREAIEE SOL DEV

[8] CALCULATION OF THE SPACE CHARGE, ELECTRIC FIELD, AND FREE CARRIER CONCENTRATION AT THE SURFACE OF A SEMICONDUCTOR [J].

KINGSTON, RH ;

NEUSTADTER, SF .

JOURNAL OF APPLIED PHYSICS, 1955, 26 (06) :718-720

[9] CHEMICAL + AMBIENT EFFECTS ON SURFACE CONDUCTION IN PASSIVATED SILICON SEMICONDUCTORS [J].

LEHMAN, HS .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) :422-&

[10] EFFECTS OF ELECTRONS AND HOLES ON TRANSITION LAYER CHARACTERISTICS OF LINEARLY GRADED P-N JUNCTIONS [J].

SAH, CT .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1961, 49 (03) :603-&

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