EFFECT OF OXIDE HYDRATION ON SURFACE POTENTIAL OF OXIDIZED P-TYPE SILICON

被引：12

作者：

KUPER, AB

NICOLLIA.EH

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1965年 / 112卷 / 05期

关键词：

D O I：

10.1149/1.2423591

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：528 / &

共 10 条

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[2]

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[5]

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[7] THE MECHANISMS FOR SILICON OXIDATION IN STEAM AND OXYGEN [J].

LIGENZA, JR ;

SPITZER, WG .

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[8] ENTRY OF WATER INTO SILICA GLASS [J].

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[9]

Sah C. T., 1961, P IRE, V49, P1623

[10] OXYGEN EXCHANGE BETWEEN SILICA AND HIGH PRESSURE STEAM [J].

SPITZER, WG ;

LIGENZA, JR .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 17 (3-4) :196-202

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