TEST FOR LATERAL NONUNIFORMITIES IN MOS DEVICES USING ONLY CAPACITANCE CURVES

被引:27
作者
BREWS, JR [1 ]
LOPEZ, AD [1 ]
机构
[1] BELL TELE LABS,MURRAY HILL,NJ 07974
关键词
D O I
10.1016/0038-1101(73)90082-8
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1267 / 1277
页数:11
相关论文
共 29 条
[1]  
BALK P, 1965, EL SOC SPRING M SAN, P237
[2]   Thermionic electron emission and adsorption Part I. Thermionic emission [J].
Becker, JA .
REVIEWS OF MODERN PHYSICS, 1935, 7 (02) :0095-0128
[3]   SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES [J].
BERGLUND, CN .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (10) :701-+
[4]   LIMITATIONS UPON PHOTOINJECTION STUDIES OF CHARGE DISTRIBUTIONS CLOSE TO INTERFACES IN MOS CAPACITORS [J].
BREWS, JR .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) :379-384
[5]   ADMITTANCE OF AN MOS DEVICE WITH INTERFACE CHARGE INHOMOGENEITIES [J].
BREWS, JR .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (08) :3451-&
[7]   CORRECTING INTERFACE-STATE ERRORS IN MOS DOPING PROFILE DETERMINATIONS [J].
BREWS, JR .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (07) :3228-3231
[8]  
BREWS JR, UNPUBLISHED
[9]   APPARENT INTERFACE STATE DENSITY INTRODUCED BY SPATIAL FLUCTUATIONS OF SURFACE POTENTIAL IN AN MOS STRUCTURE [J].
CASTAGNE, R ;
VAPAILLE, A .
ELECTRONICS LETTERS, 1970, 6 (22) :691-+
[10]   DESCRIPTION OF SIO2-SI INTERFACE PROPERTIES BY MEANS OF VERY LOW FREQUENCY MOS CAPACITANCE MEASUREMENTS [J].
CASTAGNE, R ;
VAPAILLE, A .
SURFACE SCIENCE, 1971, 28 (01) :157-+