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TEST FOR LATERAL NONUNIFORMITIES IN MOS DEVICES USING ONLY CAPACITANCE CURVES
被引:27
作者
:
BREWS, JR
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TELE LABS,MURRAY HILL,NJ 07974
BELL TELE LABS,MURRAY HILL,NJ 07974
BREWS, JR
[
1
]
LOPEZ, AD
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TELE LABS,MURRAY HILL,NJ 07974
BELL TELE LABS,MURRAY HILL,NJ 07974
LOPEZ, AD
[
1
]
机构
:
[1]
BELL TELE LABS,MURRAY HILL,NJ 07974
来源
:
SOLID-STATE ELECTRONICS
|
1973年
/ 16卷
/ 11期
关键词
:
D O I
:
10.1016/0038-1101(73)90082-8
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:1267 / 1277
页数:11
相关论文
共 29 条
[1]
BALK P, 1965, EL SOC SPRING M SAN, P237
[2]
Thermionic electron emission and adsorption Part I. Thermionic emission
[J].
Becker, JA
论文数:
0
引用数:
0
h-index:
0
Becker, JA
.
REVIEWS OF MODERN PHYSICS,
1935,
7
(02)
:0095
-0128
[3]
SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES
[J].
BERGLUND, CN
论文数:
0
引用数:
0
h-index:
0
BERGLUND, CN
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1966,
ED13
(10)
:701
-+
[4]
LIMITATIONS UPON PHOTOINJECTION STUDIES OF CHARGE DISTRIBUTIONS CLOSE TO INTERFACES IN MOS CAPACITORS
[J].
BREWS, JR
论文数:
0
引用数:
0
h-index:
0
机构:
BELL LABS,MURRAY HILL,NJ 07974
BELL LABS,MURRAY HILL,NJ 07974
BREWS, JR
.
JOURNAL OF APPLIED PHYSICS,
1973,
44
(01)
:379
-384
[5]
ADMITTANCE OF AN MOS DEVICE WITH INTERFACE CHARGE INHOMOGENEITIES
[J].
BREWS, JR
论文数:
0
引用数:
0
h-index:
0
BREWS, JR
.
JOURNAL OF APPLIED PHYSICS,
1972,
43
(08)
:3451
-&
[6]
SURFACE POTENTIAL FLUCTUATIONS GENERATED BY INTERFACE CHARGE INHOMOGENEITIES IN MOS DEVICES
[J].
BREWS, JR
论文数:
0
引用数:
0
h-index:
0
BREWS, JR
.
JOURNAL OF APPLIED PHYSICS,
1972,
43
(05)
:2306
-&
[7]
CORRECTING INTERFACE-STATE ERRORS IN MOS DOPING PROFILE DETERMINATIONS
[J].
BREWS, JR
论文数:
0
引用数:
0
h-index:
0
机构:
BELL LABS,MURRAY HILL,NJ 07974
BELL LABS,MURRAY HILL,NJ 07974
BREWS, JR
.
JOURNAL OF APPLIED PHYSICS,
1973,
44
(07)
:3228
-3231
[8]
BREWS JR, UNPUBLISHED
[9]
APPARENT INTERFACE STATE DENSITY INTRODUCED BY SPATIAL FLUCTUATIONS OF SURFACE POTENTIAL IN AN MOS STRUCTURE
[J].
CASTAGNE, R
论文数:
0
引用数:
0
h-index:
0
CASTAGNE, R
;
VAPAILLE, A
论文数:
0
引用数:
0
h-index:
0
VAPAILLE, A
.
ELECTRONICS LETTERS,
1970,
6
(22)
:691
-+
[10]
DESCRIPTION OF SIO2-SI INTERFACE PROPERTIES BY MEANS OF VERY LOW FREQUENCY MOS CAPACITANCE MEASUREMENTS
[J].
CASTAGNE, R
论文数:
0
引用数:
0
h-index:
0
CASTAGNE, R
;
VAPAILLE, A
论文数:
0
引用数:
0
h-index:
0
VAPAILLE, A
.
SURFACE SCIENCE,
1971,
28
(01)
:157
-+
←
1
2
3
→
共 29 条
[1]
BALK P, 1965, EL SOC SPRING M SAN, P237
[2]
Thermionic electron emission and adsorption Part I. Thermionic emission
[J].
Becker, JA
论文数:
0
引用数:
0
h-index:
0
Becker, JA
.
REVIEWS OF MODERN PHYSICS,
1935,
7
(02)
:0095
-0128
[3]
SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES
[J].
BERGLUND, CN
论文数:
0
引用数:
0
h-index:
0
BERGLUND, CN
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1966,
ED13
(10)
:701
-+
[4]
LIMITATIONS UPON PHOTOINJECTION STUDIES OF CHARGE DISTRIBUTIONS CLOSE TO INTERFACES IN MOS CAPACITORS
[J].
BREWS, JR
论文数:
0
引用数:
0
h-index:
0
机构:
BELL LABS,MURRAY HILL,NJ 07974
BELL LABS,MURRAY HILL,NJ 07974
BREWS, JR
.
JOURNAL OF APPLIED PHYSICS,
1973,
44
(01)
:379
-384
[5]
ADMITTANCE OF AN MOS DEVICE WITH INTERFACE CHARGE INHOMOGENEITIES
[J].
BREWS, JR
论文数:
0
引用数:
0
h-index:
0
BREWS, JR
.
JOURNAL OF APPLIED PHYSICS,
1972,
43
(08)
:3451
-&
[6]
SURFACE POTENTIAL FLUCTUATIONS GENERATED BY INTERFACE CHARGE INHOMOGENEITIES IN MOS DEVICES
[J].
BREWS, JR
论文数:
0
引用数:
0
h-index:
0
BREWS, JR
.
JOURNAL OF APPLIED PHYSICS,
1972,
43
(05)
:2306
-&
[7]
CORRECTING INTERFACE-STATE ERRORS IN MOS DOPING PROFILE DETERMINATIONS
[J].
BREWS, JR
论文数:
0
引用数:
0
h-index:
0
机构:
BELL LABS,MURRAY HILL,NJ 07974
BELL LABS,MURRAY HILL,NJ 07974
BREWS, JR
.
JOURNAL OF APPLIED PHYSICS,
1973,
44
(07)
:3228
-3231
[8]
BREWS JR, UNPUBLISHED
[9]
APPARENT INTERFACE STATE DENSITY INTRODUCED BY SPATIAL FLUCTUATIONS OF SURFACE POTENTIAL IN AN MOS STRUCTURE
[J].
CASTAGNE, R
论文数:
0
引用数:
0
h-index:
0
CASTAGNE, R
;
VAPAILLE, A
论文数:
0
引用数:
0
h-index:
0
VAPAILLE, A
.
ELECTRONICS LETTERS,
1970,
6
(22)
:691
-+
[10]
DESCRIPTION OF SIO2-SI INTERFACE PROPERTIES BY MEANS OF VERY LOW FREQUENCY MOS CAPACITANCE MEASUREMENTS
[J].
CASTAGNE, R
论文数:
0
引用数:
0
h-index:
0
CASTAGNE, R
;
VAPAILLE, A
论文数:
0
引用数:
0
h-index:
0
VAPAILLE, A
.
SURFACE SCIENCE,
1971,
28
(01)
:157
-+
←
1
2
3
→