INTERFACE EFFECTS AND HIGH CONDUCTIVITY IN OXIDES GROWN FROM POLYCRYSTALLINE SILICON

被引：112

作者：

DIMARIA, DJ

KERR, DR

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

[2] IBM CORP,SYST PROD DIV,E FISHKILL FACIL,HOPEWELL JUNCTION,NY 12533

来源：

APPLIED PHYSICS LETTERS | 1975年 / 27卷 / 09期

关键词：

D O I：

10.1063/1.88536

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：505 / 507

页数：3

共 15 条

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