EFFECTS ON INTERFACE BARRIER ENERGIES OF METAL-ALUMINUM OXIDE-SEMICONDUCTOR (MAS) STRUCTURES AS A FUNCTION OF METAL ELECTRODE MATERIAL, CHARGE TRAPPING, AND ANNEALING

被引：44

作者：

DIMARIA, DJ ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 12期

关键词：

D O I：

10.1063/1.1663258

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5454 / 5456

页数：3

共 12 条

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