CHARGE INJECTION IN MAOS SYSTEMS

被引：35

作者：

BALK, P

STEPHANY, F

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1971年 / 118卷 / 10期

关键词：

D O I：

10.1149/1.2407800

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1634 / +

页数：1

共 27 条

[1]

ABOAF J, PRIVATE COMMUNICATIO

[2]

BALK P, 1970, NACHRICHTENTECH Z, V23, P526

[3] SI-SIO2 FAST INTERFACE STATE MEASUREMENTS [J].

BROWN, DM ;

GRAY, PV .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (07) :760-+

[4]

Dorda G., 1970, Physica Status Solidi A, V1, P71, DOI 10.1002/pssa.19700010109

[5] INTERFACE PROPERTIES OF SI-(SIO2)-AL2 O3 STRUCTURES [J].

DUFFY, MT ;

REVESZ, AG .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (03) :372-+

[6] PRELIMINARY INVESTIGATIONS OF REACTIVELY EVAPORATED ALUMINUM OXIDE FILMS ON SILICON [J].

FERRIEU, E ;

PRUNIAUX, B .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (07) :1008-+

[7]

FILARETOV GA, 1968, SOV PHYS SEMICOND+, V1, P1242

[8] CHARGE TRANSPORT AND STORAGE IN METAL-NITRIDE-OXIDE-SILICON (MNOS) STRUCTURES [J].

FROHMANB.D ;

LENZLINGER, M .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) :3307-+

[9] PHOTOEMISSION OF ELECTRONS FROM METALS INTO SILICON DIOXIDE [J].

GOODMAN, AM ;

ONEILL, JJ .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (09) :3580-&

[10] PHOTOEMISSION OF HOLES AND ELECTRONS FROM ALUMINUM INTO ALUMINUM OXIDE [J].

GOODMAN, AM .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (05) :2176-&

← 1 2 3 →