CAPTURE OF ELECTRONS INTO NA+-RELATED TRAPPING SITES IN SIO2 LAYER OF MOS STRUCTURES AT 77 DEGREESK

被引：40

作者：

DIMARIA, DJ ^{[1
]}

AITKEN, JM ^{[1
]}

YOUNG, DR ^{[1
]}

机构：

[1] IBM CORP THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 06期

关键词：

D O I：

10.1063/1.322998

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2740 / 2743

页数：4

共 21 条

[1] ELECTRON TRAPPING BY RADIATION-INDUCED CHARGE IN MOS DEVICES [J].

AITKEN, JM ;

YOUNG, DR .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (03) :1196-1198

[2] SI-SIO2 FAST INTERFACE STATE MEASUREMENTS [J].

BROWN, DM ;

GRAY, PV .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (07) :760-+

[3]

BUTLER SR, 1975, ELECTROCHEMICAL SOC

[4] TRAP IONIZATION BY ELECTRON-IMPACT IN AMORPHOUS SIO2-FILMS [J].

DIMARIA, DJ ;

FEIGL, FJ ;

BUTLER, SR .

APPLIED PHYSICS LETTERS, 1974, 24 (10) :459-461

[5] CAPTURE AND EMISSION OF ELECTRONS AT 2.4-EV-DEEP TRAP LEVEL IN SIO2-FILMS [J].

DIMARIA, DJ ;

FEIGL, FJ ;

BUTLER, SR .

PHYSICAL REVIEW B, 1975, 11 (12) :5023-5030

[6]

DIMARIA DJ, 1973, THESIS LEHIGH U

[7] INFLUENCE OF SODIUM ON SI-SIO2 INTERFACE [J].

DISTEFANO, TH ;

LEWIS, JE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (06) :1020-1024

[8] FIELD-ENHANCED IONIZATION [J].

DUSSEL, GA ;

BOER, KW .

PHYSICA STATUS SOLIDI, 1970, 39 (02) :375-&

[9] ELECTRIC FIELD EFFECTS IN TRAPPING PROCESSES [J].

DUSSEL, GA ;

BUBE, RH .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (07) :2797-&

[10] DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E) [J].

GRAY, PV ;

BROWN, DM .

APPLIED PHYSICS LETTERS, 1966, 8 (02) :31-&

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