IMPACT IONIZATION IN NARROW GAP SEMICONDUCTORS

被引：39

作者：

CURBY, RC

FERRY, DK

机构：

[1] TEXAS TECH UNIV, LABS PHYS ELECTR, LUBBOCK, TX 79409 USA

[2] TEXAS TECH UNIV, DEPT ELECT ENGN, LUBBOCK, TX 79409 USA

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1973年 / 15卷 / 01期

关键词：

D O I：

10.1002/pssa.2210150136

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：319 / 328

页数：10

共 30 条

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