HYDROGEN PASSIVATION OF LASER-INDUCED ACCEPTOR DEFECTS IN P-TYPE SILICON

被引：14

作者：

LAWSON, EM

PEARTON, SJ

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1982年 / 72卷 / 02期

关键词：

D O I：

10.1002/pssa.2210720258

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K155 / K158

页数：4

共 15 条

[1]

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LEAMY, HJ .

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[3]

CULLIS AG, 1979, J PHYS E, V12, P689

[4]

GAT A, 1978, APPL PHYS LETT, V32, P139

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[6] LASER DOPING - A METHOD FOR PRODUCING THIN CONTACTS ON SEMICONDUCTOR NUCLEAR RADIATION DETECTORS [J].

LAWSON, EM .

NUCLEAR INSTRUMENTS & METHODS, 1981, 180 (2-3) :651-653

[7]

LAWSON EM, 1981, AAECE523

[8] PERIODIC REGROWTH PHENOMENA PRODUCED BY LASER ANNEALING OF ION-IMPLANTED SILICON [J].

LEAMY, HJ ;

ROZGONYI, GA ;

SHENG, TT ;

CELLER, GK .

APPLIED PHYSICS LETTERS, 1978, 32 (09) :535-537

[9]

MILLER GL, 1978, SEMICONDUCTOR CHARAC, P502

[10] DEFECTS IN LASER DAMAGED SILICON OBSERVED BY DLTS [J].

MOONEY, PM ;

YOUNG, RT ;

KARINS, J ;

LEE, YH ;

CORBETT, JW .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 48 (01) :K31-K34

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