THE INFLUENCE OF COMPENSATION ON THE HALL-EFFECT AND MAGNETORESISTANCE OF NORMAL-HG0.8CD0.2TE

被引：3

作者：

TSIDILKOVSKII, IM

ARAPOV, YG

ZVEREVA, ML

BRANDT, NB

KULBACHINSKII, VA

GORBATYUK, IN

ELIZAROV, AI

机构：

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1988年 / 148卷 / 01期

关键词：

D O I：

10.1002/pssb.2221480117

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：197 / 204

页数：8

共 25 条

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[8] OBSERVATION OF IMPURITY CYCLOTRON-RESONANCE IN HG1-XCDXTE [J].

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[9] ANOMALOUS HALL-EFFECT BELOW THE MAGNETIC-FIELD-INDUCED METAL-INSULATOR-TRANSITION IN NARROW-GAP SEMICONDUCTORS [J].

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