FORMATION OF 20-25A THERMAL OXIDE FILMS ON SILICON AT 950 DEGREES-1140 DEGREES C

被引：19

作者：

ABOAF, JA

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1971年 / 118卷 / 08期

关键词：

D O I：

10.1149/1.2408325

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

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页码：1370 / &

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