ELECTRICAL AND OPTICAL-PROPERTIES OF AS-GROWN TLINS2, TLGASE2 AND TLGAS2 SINGLE-CRYSTALS

被引：153

作者：

HANIAS, MP

ANAGNOSTOPOULOS, AN

KAMBAS, K

SPYRIDELIS, J

机构：

[1] Aristotle University of Thessaloniki, Department of Physics, Solid State Section

来源：

MATERIALS RESEARCH BULLETIN | 1992年 / 27卷 / 01期

关键词：

LAYERED; COMPOUNDS; TERNARY COMPOUNDS; SULFIDES; GALLIUM; INDIUM; THALLIUM; SELENIDES;

D O I：

10.1016/0025-5408(92)90039-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Single crystals of the layered compounds TlInS2, TlGaS2 and TlGaSe2 were grown by direct synthesis of their constituents. Their electrical conductivity was studied as a function of the temperature, perpendicularly and parallel to the layer planes and it proved to be highly anisotropic. Furthermore, a differential evaluation of measured ln-sigma vs. 10(3)/T curves reveals the existence of an acceptor level at 0.237 eV, 0.370 eV and 0.207 eV above the valence band maximum of each compound, respectively. Optical absorption measurements were performed in the temperature range 15 to 300 K and the corresponding absorption coefficients were studied as a function of the temperature.

引用

页码：25 / 38

页数：14

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