THE INFLUENCE OF COMPENSATION ON THE TEMPERATURE-DEPENDENCE OF FREE-CARRIERS CONCENTRATION IN SEMICONDUCTORS

被引：7

作者：

ANAGNOSTOPOULOS, AN

机构：

[1] Aristoteles University of Thessaloniki, Solid State Section 313-1, Physics Department

来源：

PHYSICA B | 1990年 / 162卷 / 02期

关键词：

D O I：

10.1016/0921-4526(90)90045-V

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The influence of compensating levels on the ln n-103 T characteristics of semiconductors is examined. A differential evaluation of them, with no previous assumptions of the compensation degree enables the direct determination of concentrations and energy levels of donors involved in these curves, as well as the precise estimation of the total concentration of compensating levels, even in the case of very strong compensation. © 1990.

引用

页码：133 / 138

页数：6

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