PREPARATION AND CHARACTERIZATION OF GALLIUM(III) FLUORIDE THIN-FILMS

被引:15
作者
BARRIERE, AS [1 ]
COUTURIER, G [1 ]
GEVERS, G [1 ]
GUEGAN, H [1 ]
SEGUELOND, T [1 ]
THABTI, A [1 ]
BERTAULT, D [1 ]
机构
[1] CEN BORDEAUX,F-33170 GRADIGNAN,FRANCE
关键词
D O I
10.1016/0040-6090(89)90140-5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:243 / 252
页数:10
相关论文
共 13 条
  • [1] PHYSICOCHEMICAL AND ELECTRICAL CHARACTERIZATION OF FLUORIDE - III-V SEMICONDUCTOR STRUCTURES (PASSIVATION OF GAAS AND INP)
    BARRIERE, AS
    CHAOUKI, A
    COUTURIER, G
    SEGUELONG, T
    SRIBI, C
    ALNOT, P
    [J]. REVUE DE PHYSIQUE APPLIQUEE, 1988, 23 (01): : 63 - 70
  • [2] PHYSICOCHEMICAL CHARACTERIZATION OF THIN-FILMS OBTAINED BY FLUORINATION OF GAAS UNDER 5 BAR OF FLUORINE
    BARRIERE, AS
    DESBAT, B
    GUEGAN, H
    LOZANO, L
    SEGUELONG, T
    TRESSAUD, A
    ALNOT, P
    [J]. THIN SOLID FILMS, 1989, 170 (02) : 259 - 271
  • [3] IMPURITY CONDUCTION ALONG THE LEAST RESISTANCE PATHS OF GRANULAR INSULATING THIN-FILMS
    BARRIERE, AS
    GEVERS, G
    [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1984, 123 (01): : 377 - 391
  • [4] BASSANI GF, 1966, P INT SCH PHYS, P33
  • [5] Briggs D., 1983, PRACTICAL SURFACE AN, P133
  • [6] Chu W. K., 1978, BACKSCATTERING SPECT
  • [7] Grannec J., 1985, INORGANIC SOLID FLUO, P17, DOI 10.1016/B978-0-12-313370-0.50007-4
  • [8] MAYER JW, 1977, ION BEMA HDB MATERIA
  • [9] SIMULTANEOUS OBSERVATION OF RUTHERFORD SCATTERING AND (ALPHA,X) REACTIONS IN ALF3 AND MGF2 LAYERS AND CORRELATION WITH THEIR ELECTRICAL PROPERTIES
    SABOYA, B
    CHEMIN, JF
    ROTURIER, J
    BARRIERE, A
    DANTO, Y
    SALARDENNE, J
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1975, 8 (09) : 1008 - 1020
  • [10] Seah M. P., 1979, Surface and Interface Analysis, V1, P2, DOI 10.1002/sia.740010103