PHYSICOCHEMICAL AND ELECTRICAL CHARACTERIZATION OF FLUORIDE - III-V SEMICONDUCTOR STRUCTURES (PASSIVATION OF GAAS AND INP)

被引：5

作者：

BARRIERE, AS ^{[1
]}

CHAOUKI, A ^{[1
]}

COUTURIER, G ^{[1
]}

SEGUELONG, T ^{[1
]}

SRIBI, C ^{[1
]}

ALNOT, P ^{[1
]}

机构：

[1] THOMSON CSF,LCR,F-91401 ORSAY,FRANCE

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1988年 / 23卷 / 01期

关键词：

D O I：

10.1051/rphysap:0198800230106300

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：63 / 70

页数：8

共 20 条

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[3] BARRIERE AS, 1987, IN PRESS THIN SOLID
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[5] GERB KM, 1984, J VAC SCI TECHNOL B, V2, P516
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[7] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES
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[8] SIMPLE PHYSICAL MODEL FOR SPACE-CHARGE CAPACITANCE OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES
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[9] NEW ANODIC NATIVE OXIDE OF GAAS WITH IMPROVED DIELECTRIC AND INTERFACE PROPERTIES
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[J]. APPLIED PHYSICS LETTERS, 1975, 26 (10) : 567 - 569
[10] CAPACITANCE-VOLTAGE CHARACTERISTICS OF AL-AL2O3-P-GAAS METAL-OXIDE-SEMICONDUCTOR DIODES
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[J]. APPLIED PHYSICS LETTERS, 1980, 37 (04) : 404 - 406

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