THIN-FILMS OF SOLID-SOLUTIONS OF FLUORIDES FOR EPITAXY ON III-V SEMICONDUCTORS

被引：13

作者：

BARRIERE, AS ^{[1
]}

COUTURIER, G ^{[1
]}

GEVERS, G ^{[1
]}

GRANNEC, J ^{[1
]}

RICARD, H ^{[1
]}

SRIBI, C ^{[1
]}

机构：

[1] UNIV BORDEAUX 1,CHIM SOLIDE LAB,F-33405 TALENCE,FRANCE

来源：

SURFACE SCIENCE | 1986年 / 168卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(86)90901-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：688 / 700

页数：13

共 12 条

[1] ELECTROABSORPTION IN SEMICONDUCTORS - EXCITONIC ABSORPTION EDGE
DOW, JD
REDFIELD, D
[J]. PHYSICAL REVIEW B, 1970, 1 (08): : 3358 - &
[2] NEW ANODIC NATIVE OXIDE OF GAAS WITH IMPROVED DIELECTRIC AND INTERFACE PROPERTIES
HASEGAWA, H
FORWARD, KE
HARTNAGEL, HL
[J]. APPLIED PHYSICS LETTERS, 1975, 26 (10) : 567 - 569
[3] CAPACITANCE-VOLTAGE CHARACTERISTICS OF AL-AL2O3-P-GAAS METAL-OXIDE-SEMICONDUCTOR DIODES
HAYASHI, H
KIKUCHI, K
YAMAGUCHI, T
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (04) : 404 - 406
[4] BAND STRUCTURE AND COHESIVE ENERGY OF POTASSIUM CHLORIDE
HOWLAND, LP
[J]. PHYSICAL REVIEW, 1958, 109 (06): : 1927 - 1943
[5] EPITAXIAL RELATIONS IN LATTICE-MATCHED (CA,SR)F2 FILMS GROWN ON GAAS(111) AND GE(111) SUBSTRATES
ISHIWARA, H
TSUTSUI, K
ASANO, T
FURUKAWA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (10): : L803 - L805
[6] ROBINKANDARE S, 1966, CR ACAD SCI B PHYS, V262, P1020
[7] EPITAXIAL-GROWTH OF LATTICE-MATCHED CAXSR1-XF2 ON (100) AND (110) GAAS SUBSTRATES
SISKOS, S
FONTAINE, C
MUNOZYAGUE, A
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) : 1642 - 1646
[8] INSULATING EPITAXIAL-FILMS OF BAF2, CAF2 AND BAXCA1-XF2 GROWN BY MBE ON INP SUBSTRATES
SULLIVAN, PW
FARROW, RFC
JONES, GR
[J]. JOURNAL OF CRYSTAL GROWTH, 1982, 60 (02) : 403 - 413
[9] OPTICAL STUDIES OF ALKALI FLUORIDES AND ALKALINE EARTH FLUORIDES IN VUV REGION
TOMIKI, T
MIYATA, T
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1969, 27 (03) : 658 - &
[10] LATTICE-MATCHED SINGLE-CRYSTALLINE DIELECTRIC FILMS (BAXSR1-XF2) ON INP(001) GROWN BY MOLECULAR-BEAM EPITAXY
TU, CW
SHENG, TT
MACRANDER, AT
PHILLIPS, JM
GUGGENHEIM, HJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (01): : 24 - 26

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