EPITAXIAL-GROWTH OF LATTICE-MATCHED CAXSR1-XF2 ON (100) AND (110) GAAS SUBSTRATES

被引：53

作者：

SISKOS, S

FONTAINE, C

MUNOZYAGUE, A

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 06期

关键词：

D O I：

10.1063/1.334151

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1642 / 1646

页数：5

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