AN EPITAXIAL SI/INSULATOR/SI STRUCTURE PREPARED BY VACUUM DEPOSITION OF CAF2 AND SILICON

被引：53

作者：

ASANO, T

ISHIWARA, H

机构：

来源：

THIN SOLID FILMS | 1982年 / 93卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(82)90099-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

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页码：143 / 150

页数：8

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