ORIENTED CRYSTAL-GROWTH OF SI ON SIO2 PATTERNS BY PULSE RUBY-LASER ANNEALING

被引：26

作者：

TAMURA, M

TAMURA, H

MIYAO, M

TOKUYAMA, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 01期

关键词：

D O I：

10.7567/JJAPS.20S1.43

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：43 / 48

页数：6

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