SI BRIDGING EPITAXY FROM SI WINDOWS ONTO SIO2 BY Q-SWITCHED RUBY-LASER PULSE ANNEALING

[1] MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 788 - 797

[2] EPITAXIAL LASER CRYSTALLIZATION OF THIN-FILM AMORPHOUS SILICON [J]. APPLIED PHYSICS LETTERS, 1978, 33 (03) : 227 - 230

[3] CW LASER ANNEAL OF POLYCRYSTALLINE SILICON - CRYSTALLINE-STRUCTURE, ELECTRICAL-PROPERTIES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (08) : 775 - 778

[4] CRYSTALLOGRAPHIC ORIENTATION OF SILICON ON AN AMORPHOUS SUBSTRATE USING AN ARTIFICIAL SURFACE-RELIEF GRATING AND LASER CRYSTALLIZATION [J]. APPLIED PHYSICS LETTERS, 1979, 35 (01) : 71 - 74

[5] CW LASER RECRYSTALLIZATION OF (100) SI ON AMORPHOUS SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1979, 34 (12) : 831 - 833

[6] HOLLOMON JH, 1953, PROGR METAL PHYSICS, P356

[7] LAU SS, 1978, APPL PHYS LETT, V33, P235, DOI 10.1063/1.90310

[8] EPITAXIAL-GROWTH OF DEPOSITED AMORPHOUS LAYER BY LASER ANNEALING [J]. APPLIED PHYSICS LETTERS, 1978, 33 (02) : 130 - 131

[9] DEPTH OF MELTING PRODUCED BY PULSED-LASER IRRADIATION [J]. APPLIED PHYSICS LETTERS, 1979, 34 (05) : 312 - 315

[10] GROWTH OF DISLOCATIONS DURING LASER MELTING AND SOLIDIFICATION [J]. APPLIED PHYSICS LETTERS, 1979, 35 (04) : 330 - 332

[1] MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 788 - 797

[2] EPITAXIAL LASER CRYSTALLIZATION OF THIN-FILM AMORPHOUS SILICON [J]. APPLIED PHYSICS LETTERS, 1978, 33 (03) : 227 - 230

[3] CW LASER ANNEAL OF POLYCRYSTALLINE SILICON - CRYSTALLINE-STRUCTURE, ELECTRICAL-PROPERTIES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (08) : 775 - 778

[4] CRYSTALLOGRAPHIC ORIENTATION OF SILICON ON AN AMORPHOUS SUBSTRATE USING AN ARTIFICIAL SURFACE-RELIEF GRATING AND LASER CRYSTALLIZATION [J]. APPLIED PHYSICS LETTERS, 1979, 35 (01) : 71 - 74

[5] CW LASER RECRYSTALLIZATION OF (100) SI ON AMORPHOUS SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1979, 34 (12) : 831 - 833

[6] HOLLOMON JH, 1953, PROGR METAL PHYSICS, P356

[7] LAU SS, 1978, APPL PHYS LETT, V33, P235, DOI 10.1063/1.90310

[8] EPITAXIAL-GROWTH OF DEPOSITED AMORPHOUS LAYER BY LASER ANNEALING [J]. APPLIED PHYSICS LETTERS, 1978, 33 (02) : 130 - 131

[9] DEPTH OF MELTING PRODUCED BY PULSED-LASER IRRADIATION [J]. APPLIED PHYSICS LETTERS, 1979, 34 (05) : 312 - 315

[10] GROWTH OF DISLOCATIONS DURING LASER MELTING AND SOLIDIFICATION [J]. APPLIED PHYSICS LETTERS, 1979, 35 (04) : 330 - 332