EPITAXIAL-GROWTH OF DEPOSITED AMORPHOUS LAYER BY LASER ANNEALING

被引：50

作者：

LAU, SS ^{[1
]}

TSENG, WF ^{[1
]}

NICOLET, MA ^{[1
]}

MAYER, JW ^{[1
]}

ECKARDT, RC ^{[1
]}

WAGNER, RJ ^{[1
]}

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

来源：

APPLIED PHYSICS LETTERS | 1978年 / 33卷 / 02期

关键词：

D O I：

10.1063/1.90280

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：130 / 131

页数：2

共 10 条

[1]

BROWN WL, 1977, P C RAPID SOLIDIFICA

[2]

CAMPISANO SU, 1978, APPL PHYS LETT, V32, P824

[3]

FOTI G, 1978, APPL PHYS, V15, P368

[4] LASER-SCANNING APPARATUS FOR ANNEALING OF ION-IMPLANTATION DAMAGE IN SEMICONDUCTORS [J].

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[5] ANNEALING OF TE-IMPLANTED GAAS BY RUBY-LASER IRRADIATION [J].

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VENKATESAN, TNC .

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[6] SILICON SOLAR-CELLS BY HIGH-SPEED LOW-TEMPERATURE PROCESSING [J].

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) :429-432

[7] SOLID-PHASE EPITAXY IN SILICIDE-FORMING SYSTEMS [J].

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LIAU, ZL ;

NICOLET, MA .

THIN SOLID FILMS, 1977, 47 (03) :313-322

[8] SILICON EPITAXY BY SOLID-PHASE CRYSTALLIZATION OF DEPOSITED AMORPHOUS FILMS [J].

ROTH, JA ;

ANDERSON, CL .

APPLIED PHYSICS LETTERS, 1977, 31 (10) :689-691

[9]

SHTYRKOV EI, 1975, SOV PHYS SEMICOND+, V9, P1309

[10] LASER ANNEALING OF BORON-IMPLANTED SILICON [J].

YOUNG, RT ;

WHITE, CW ;

CLARK, GJ ;

NARAYAN, J ;

CHRISTIE, WH ;

MURAKAMI, M ;

KING, PW ;

KRAMER, SD .

APPLIED PHYSICS LETTERS, 1978, 32 (03) :139-141

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