SOLID-PHASE EPITAXY IN SILICIDE-FORMING SYSTEMS

被引：23

作者：

LAU, SS ^{[1
]}

LIAU, ZL ^{[1
]}

NICOLET, MA ^{[1
]}

机构：

[1] CALTECH, PASADENA, CA 91125 USA

来源：

THIN SOLID FILMS | 1977年 / 47卷 / 03期

关键词：

D O I：

10.1016/0040-6090(77)90046-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：313 / 322

页数：10

相关论文

共 40 条

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[3] BOWMAN AL, 1976, TREATISE SOLID STATE, V3, pCH4
[4] SOLID-PHASE EPITAXIAL-GROWTH OF SI THROUGH PALLADIUM SILICIDE LAYERS
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[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1976, 9 (06) : 965 - 972
[8] REGROWTH KINETICS OF AMORPHOUS-GE LAYERS CREATED BY GE-74 AND SI-28 IMPLANTATION OF GE CRYSTALS
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[J]. SOLID STATE COMMUNICATIONS, 1977, 21 (11) : 1019 - 1021
[9] REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON
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SIGMON, TW
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (02) : 92 - 93
[10] CHANNELING EFFECT MEASUREMENTS OF RECRYSTALLIZATION OF AMORPHOUS SI LAYERS ON CRYSTAL SI
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[J]. PHYSICS LETTERS A, 1975, 54 (02) : 157 - 158

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