IMPLANTED NOBLE-GAS ATOMS AS DIFFUSION MARKERS IN SILICIDE FORMATION

[1] BOWER RW, 1973, SOLID STATE ELECTRON, V16, P1461, DOI 10.1016/0038-1101(73)90063-4

[2] USE OF RUTHERFORD BACKSCATTERING TO STUDY BEHAVIOR OF ION-IMPLANTED ATOMS DURING ANODIC-OXIDATION OF ALUMINUM - AR, KR, XE, K, RB, CS, CL, BR, AND I [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (08) : 1096 - 1102

[3] IDENTIFICATION OF DOMINANT DIFFUSING SPECIES IN SILICIDE FORMATION [J]. APPLIED PHYSICS LETTERS, 1974, 25 (08) : 454 - 457

[4] GROVE AS, 1967, PHYS TECHNOL S, P23

[5] GROWTH AND TRANSFORMATION OF PD2SI ON (111), (110) AND (100) SI [J]. THIN SOLID FILMS, 1973, 18 (02) : 343 - 363

[6] ANALYSIS OF FORMATION OF HAFNIUM SILICIDE ON SILICON [J]. APPLIED PHYSICS LETTERS, 1973, 22 (02) : 81 - 83

[7] Kirkendall EO, 1942, T AM I MIN MET ENG, V147, P104

[8] KRAUTLE H, 1974, APPLICATION ION BEAM

[9] IRON SILICIDE THIN-FILM FORMATION AT LOW-TEMPERATURES [J]. THIN SOLID FILMS, 1975, 25 (02) : 415 - 422

[10] MADER S, TO BE PUBLISHED

[1] BOWER RW, 1973, SOLID STATE ELECTRON, V16, P1461, DOI 10.1016/0038-1101(73)90063-4

[2] USE OF RUTHERFORD BACKSCATTERING TO STUDY BEHAVIOR OF ION-IMPLANTED ATOMS DURING ANODIC-OXIDATION OF ALUMINUM - AR, KR, XE, K, RB, CS, CL, BR, AND I [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (08) : 1096 - 1102

[3] IDENTIFICATION OF DOMINANT DIFFUSING SPECIES IN SILICIDE FORMATION [J]. APPLIED PHYSICS LETTERS, 1974, 25 (08) : 454 - 457

[4] GROVE AS, 1967, PHYS TECHNOL S, P23

[5] GROWTH AND TRANSFORMATION OF PD2SI ON (111), (110) AND (100) SI [J]. THIN SOLID FILMS, 1973, 18 (02) : 343 - 363

[6] ANALYSIS OF FORMATION OF HAFNIUM SILICIDE ON SILICON [J]. APPLIED PHYSICS LETTERS, 1973, 22 (02) : 81 - 83

[7] Kirkendall EO, 1942, T AM I MIN MET ENG, V147, P104

[8] KRAUTLE H, 1974, APPLICATION ION BEAM

[9] IRON SILICIDE THIN-FILM FORMATION AT LOW-TEMPERATURES [J]. THIN SOLID FILMS, 1975, 25 (02) : 415 - 422

[10] MADER S, TO BE PUBLISHED