IRON SILICIDE THIN-FILM FORMATION AT LOW-TEMPERATURES

被引：111

作者：

LAU, SS ^{[1
]}

FENG, JSY ^{[1
]}

OLOWOLAFE, JO ^{[1
]}

NICOLET, MA ^{[1
]}

机构：

[1] CALTECH,PASADENA,CA 91109

来源：

THIN SOLID FILMS | 1975年 / 25卷 / 02期

关键词：

D O I：

10.1016/0040-6090(75)90059-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：415 / 422

页数：8

共 11 条

[1]

BOWER RW, 1973, SOLID STATE ELECTRON, V16, P1461, DOI 10.1016/0038-1101(73)90063-4

[2] IMPLANTED NOBLE-GAS ATOMS AS DIFFUSION MARKERS IN SILICIDE FORMATION [J].

CHU, WK ;

LAU, SS ;

MAYER, JW ;

MULLER, H .

THIN SOLID FILMS, 1975, 25 (02) :393-402

[3] PRINCIPLES AND APPLICATIONS OF ION-BEAM TECHNIQUES FOR ANALYSIS OF SOLIDS AND THIN-FILMS [J].

CHU, WK ;

MAYER, JW ;

NICOLET, MA ;

BUCK, TM ;

AMSEL, G ;

EISEN, F .

THIN SOLID FILMS, 1973, 17 (01) :1-41

[4] TRUE DIFFUSION CURRENT OF SUBSTRATE IONS AS RATE-CONTROLLING FACTOR OF SURFACE FILM GROWTH [J].

FRANK, L .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1973, 15 (01) :251-255

[5]

HANSEN M, 1958, CONSTITUTION BINARY, P713

[6] GROWTH AND TRANSFORMATION OF PD2SI ON (111), (110) AND (100) SI [J].

HUTCHINS, GA ;

SHEPELA, A .

THIN SOLID FILMS, 1973, 18 (02) :343-363

[7] EVALUATION OF GLANCING ANGLE X-RAY-DIFFRACTION AND MEV HE-4 BACKSCATTERING ANALYSES OF SILICIDE FORMATION [J].

LAU, SS ;

CHU, WK ;

MAYER, JW ;

TU, KN .

THIN SOLID FILMS, 1974, 23 (02) :205-213

[8]

READ MH, 1964, 27 ANN PITTSB DIFFR

[9] STRUCTURE AND GROWTH KINETICS OF NI2SI ON SILICON [J].

TU, KN ;

CHU, WK ;

MAYER, JW .

THIN SOLID FILMS, 1975, 25 (02) :403-413

[10]

TU KN, 1974, 6 INT VAC C KY JAP

← 1 2 →