LASER ANNEALING OF BORON-IMPLANTED SILICON

[1] ELECTRICAL BEHAVIOR OF GROUP-3 AND GROUP-V IMPLANTED DOPANTS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) : 3702 - &

[2] DISORDER PRODUCED BY HIGH-DOSE IMPLANTATION IN SI [J]. APPLIED PHYSICS LETTERS, 1976, 29 (10) : 645 - 648

[3] DVURECHENSKY AV, 1977, 1ST USSR US SEM ION

[4] KACHURIN GA, 1976, SOV PHYS SEMICOND+, V10, P1128

[5] KHAIBULLIN IB, 1977, SOV PHYS SEMICOND+, V11, P190

[6] KHAIBULLIN IB, 1977, 1ST USSR US SEM ION

[7] LASER ANNEALING OF ARSENIC IMPLANTED SILICON [J]. PHYSICS LETTERS A, 1977, 61 (03) : 181 - 182

[8] KUTUKOVA OG, 1976, SOV PHYS SEMICOND+, V10, P265

[9] SHTYRKOV EI, 1975, SOV PHYS SEMICOND+, V9, P1309

[10] DIFFUSION OF BORON FROM SHALLOW ION IMPLANTS IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (11) : 1570 - &

[1] ELECTRICAL BEHAVIOR OF GROUP-3 AND GROUP-V IMPLANTED DOPANTS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) : 3702 - &

[2] DISORDER PRODUCED BY HIGH-DOSE IMPLANTATION IN SI [J]. APPLIED PHYSICS LETTERS, 1976, 29 (10) : 645 - 648

[3] DVURECHENSKY AV, 1977, 1ST USSR US SEM ION

[4] KACHURIN GA, 1976, SOV PHYS SEMICOND+, V10, P1128

[5] KHAIBULLIN IB, 1977, SOV PHYS SEMICOND+, V11, P190

[6] KHAIBULLIN IB, 1977, 1ST USSR US SEM ION

[7] LASER ANNEALING OF ARSENIC IMPLANTED SILICON [J]. PHYSICS LETTERS A, 1977, 61 (03) : 181 - 182

[8] KUTUKOVA OG, 1976, SOV PHYS SEMICOND+, V10, P265

[9] SHTYRKOV EI, 1975, SOV PHYS SEMICOND+, V9, P1309

[10] DIFFUSION OF BORON FROM SHALLOW ION IMPLANTS IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (11) : 1570 - &