DIFFUSION OF BORON FROM SHALLOW ION IMPLANTS IN SILICON

被引：63

作者：

WAGNER, S

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1972年 / 119卷 / 11期

关键词：

D O I：

10.1149/1.2404044

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

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页码：1570 / &

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[1] DOPED OXIDES AS DIFFUSION SOURCES .I. BORON INTO SILICON
BARRY, ML
OLOFSEN, P
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (06) : 854 - &
[2] GLASS SOURCE B DIFFUSION IN SI AND SIO2
BROWN, DM
KENNICOTT, PR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) : 293 - +
[3] Carslaw H. S., 1959, CONDUCTION HEAT SOLI
[4] CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD
CAUGHEY, DM
THOMAS, RE
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12): : 2192 - +
[5] PROPERTIES OF SILICON AND GERMANIUM .2.
CONWELL, EM
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 1281 - 1300
[6] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON
DEAL, BE
GROVE, AS
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3770 - &
[7] FAIRFIELD JM, 1969, T METALL SOC AIME, V245, P469
[8] REDISTRIBUTION OF ACCEPTOR + DONOR IMPURITIES DURING THERMAL OXIDATION OF SILICON
GROVE, AS
SAH, CT
LEISTIKO, O
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (09) : 2695 - &
[9] HART RR, 1969, AFALTR69399
[10] ON REDISTRIBUTION OF BORON IN DIFFUSED LAYER DURING THERMAL OXIDATION
HUANG, JST
WELLIVER, LC
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (12) : 1577 - &