DIFFUSION OF BORON FROM SHALLOW ION IMPLANTS IN SILICON

[11] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +

[12] KATO T, 1964, JPN J APPL PHYS, V3, P377

[13] DIFFUSION OF BORON INTO SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (02) : 303 - 305

[14] DOPED ANODIC OXIDE FILMS FOR DEVICE FABRICATION IN SILICON .2. DIFFUSION SOURCES OF CONTROLLED COMPOSITION AND DIFFUSION RESULTS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (08) : 800 - +

[15] Seidel T. E., 1971, Radiation Effects, V7, P1, DOI 10.1080/00337577108232558

[16] SEIDEL TE, 1971, ION IMPLANTATION SEM, P47

[17] 2-LEVEL EFFECT IN SHEET RESISTANCE MEASUREMENTS MADE WITH A 4-POINT PROBE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) : 390 - &

[18] TSAI JH, PRIVATE COMMUNICATIO

[19] VANDERMEULEN YT, 1971, MAY EL SOC M WASH

[11] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +

[12] KATO T, 1964, JPN J APPL PHYS, V3, P377

[13] DIFFUSION OF BORON INTO SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (02) : 303 - 305

[14] DOPED ANODIC OXIDE FILMS FOR DEVICE FABRICATION IN SILICON .2. DIFFUSION SOURCES OF CONTROLLED COMPOSITION AND DIFFUSION RESULTS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (08) : 800 - +

[15] Seidel T. E., 1971, Radiation Effects, V7, P1, DOI 10.1080/00337577108232558

[16] SEIDEL TE, 1971, ION IMPLANTATION SEM, P47

[17] 2-LEVEL EFFECT IN SHEET RESISTANCE MEASUREMENTS MADE WITH A 4-POINT PROBE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) : 390 - &

[18] TSAI JH, PRIVATE COMMUNICATIO

[19] VANDERMEULEN YT, 1971, MAY EL SOC M WASH