DIFFUSION OF BORON INTO SILICON

被引：93

作者：

KURTZ, AD

YEE, R

机构：

来源：

关键词：

D O I：

10.1063/1.1735562

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：303 / 305

页数：3

共 6 条

[1] EVALUATION OF THE SURFACE CONCENTRATION OF DIFFUSED LAYERS IN SILICON
BACKENSTOSS, G
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1958, 37 (03): : 699 - 710
[2] BARDEEN, 1946, J CHEM PHYS, V14, P4
[3] DUNLAP, 1954, PHYS REV, V96, pA822
[4] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON
FULLER, CS
DITZENBERGER, JA
[J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) : 544 - 553
[5] ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON
MORIN, FJ
MAITA, JP
[J]. PHYSICAL REVIEW, 1954, 96 (01): : 28 - 35
[6] REISS, 1956, BELL SYSTEM TECH J, V35, P535