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ON REDISTRIBUTION OF BORON IN DIFFUSED LAYER DURING THERMAL OXIDATION
被引:39
作者
:
HUANG, JST
论文数:
0
引用数:
0
h-index:
0
HUANG, JST
WELLIVER, LC
论文数:
0
引用数:
0
h-index:
0
WELLIVER, LC
机构
:
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1970年
/ 117卷
/ 12期
关键词
:
D O I
:
10.1149/1.2407389
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:1577 / &
相关论文
共 7 条
[1]
CHAN, 1970, P IEEE, P588
[2]
OBSERVATION OF IMPURITY REDUSTRIBUTION DURING THERMAL OXIDATION OF SILICON USING MOS STRUCTURE
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
SNOW, EH
论文数:
0
引用数:
0
h-index:
0
SNOW, EH
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1965,
112
(03)
: 308
-
&
[3]
REDISTRIBUTION OF ACCEPTOR + DONOR IMPURITIES DURING THERMAL OXIDATION OF SILICON
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
LEISTIKO, O
论文数:
0
引用数:
0
h-index:
0
LEISTIKO, O
[J].
JOURNAL OF APPLIED PHYSICS,
1964,
35
(09)
: 2695
-
&
[4]
KATO T, 1964, JPN J APPL PHYS, V3, P377
[5]
DIFFUSION OF BORON INTO SILICON
KURTZ, AD
论文数:
0
引用数:
0
h-index:
0
KURTZ, AD
YEE, R
论文数:
0
引用数:
0
h-index:
0
YEE, R
[J].
JOURNAL OF APPLIED PHYSICS,
1960,
31
(02)
: 303
-
305
[6]
PERHAM LC, PRIVATE COMMUNICATIO
[7]
ORIENTATION DEPENDENT DIFFUSION OF BORON IN SILICON UNDER OXIDIZING CONDITIONS
WILLS, GN
论文数:
0
引用数:
0
h-index:
0
机构:
Associated Semiconductor Manufacturers Ltd., Wembley Laboratories, Hirst Research Centre, Wembley, England
WILLS, GN
[J].
SOLID-STATE ELECTRONICS,
1969,
12
(02)
: 133
-
&
←
1
→
共 7 条
[1]
CHAN, 1970, P IEEE, P588
[2]
OBSERVATION OF IMPURITY REDUSTRIBUTION DURING THERMAL OXIDATION OF SILICON USING MOS STRUCTURE
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
SNOW, EH
论文数:
0
引用数:
0
h-index:
0
SNOW, EH
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1965,
112
(03)
: 308
-
&
[3]
REDISTRIBUTION OF ACCEPTOR + DONOR IMPURITIES DURING THERMAL OXIDATION OF SILICON
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
LEISTIKO, O
论文数:
0
引用数:
0
h-index:
0
LEISTIKO, O
[J].
JOURNAL OF APPLIED PHYSICS,
1964,
35
(09)
: 2695
-
&
[4]
KATO T, 1964, JPN J APPL PHYS, V3, P377
[5]
DIFFUSION OF BORON INTO SILICON
KURTZ, AD
论文数:
0
引用数:
0
h-index:
0
KURTZ, AD
YEE, R
论文数:
0
引用数:
0
h-index:
0
YEE, R
[J].
JOURNAL OF APPLIED PHYSICS,
1960,
31
(02)
: 303
-
305
[6]
PERHAM LC, PRIVATE COMMUNICATIO
[7]
ORIENTATION DEPENDENT DIFFUSION OF BORON IN SILICON UNDER OXIDIZING CONDITIONS
WILLS, GN
论文数:
0
引用数:
0
h-index:
0
机构:
Associated Semiconductor Manufacturers Ltd., Wembley Laboratories, Hirst Research Centre, Wembley, England
WILLS, GN
[J].
SOLID-STATE ELECTRONICS,
1969,
12
(02)
: 133
-
&
←
1
→