DOPED OXIDES AS DIFFUSION SOURCES .I. BORON INTO SILICON

被引：72

作者：

BARRY, ML

OLOFSEN, P

机构：

[1] Fairchild Semiconductor Research and Development Laboratory, Palo Alto, California

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1969年 / 116卷 / 06期

关键词：

D O I：

10.1149/1.2412077

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A model is presented describing the diffusion of dopants from a deposited oxide into a semiconductor substrate, and simple methods are developed for measuring directly the physical constants required to describe the diffusion. Experimentally determined values of these constants for the case of boron diffusing into silicon are given for wide ranges of temperature and concentration. © 1969, The Electrochemical Society, Inc. All rights reserved.

引用

页码：854 / &

共 22 条

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[10] DIFFUSION OF BORON INTO SILICON
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