NON-DESTRUCTIVE MEASUREMENT OF SURFACE CONCENTRATIONS AND JUNCTION DEPTHS OF DIFFUSED SEMICONDUCTOR LAYERS

被引：25

作者：

ABE, T

NISHI, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1968年 / 7卷 / 04期

关键词：

D O I：

10.1143/JJAP.7.397

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：397 / &

共 17 条

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