INFRARED REFLECTIVITY OF N ON N+ SI WAFERS

[1] DETERMINATION OF EPITAXIAL-LAYER IMPURITY DISTRIBUTION BY NEUTRON ACTIVATION METHOD [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1965, 4 (01) : 70 - &

[2] ABE T, TO BE PUBLISHED

[3] ABE T, 1962, SPRING M JAPAN SOCIE

[4] THICKNESS MEASUREMENT OF EPITAXIAL FILMS BY THE INFRARED INTERFERENCE METHOD [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (08) : 709 - 713

[5] BORN M, 1959, PRINCIPLES OPTICS, P50

[6] METHOD FOR MEASURING THICKNESS OF EPITAXIAL SILICON FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (07) : 2395 - &

[7] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) : 544 - 553

[8] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +

[9] ANOMALOUS IMPURITY DIFFUSION IN EPITAXIAL SILICON NEAR THE SUBSTRATE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (11) : 1106 - 1108

[10] Moss TS., 1959, OPTICAL PROPERTIES S

[1] DETERMINATION OF EPITAXIAL-LAYER IMPURITY DISTRIBUTION BY NEUTRON ACTIVATION METHOD [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1965, 4 (01) : 70 - &

[2] ABE T, TO BE PUBLISHED

[3] ABE T, 1962, SPRING M JAPAN SOCIE

[4] THICKNESS MEASUREMENT OF EPITAXIAL FILMS BY THE INFRARED INTERFERENCE METHOD [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (08) : 709 - 713

[5] BORN M, 1959, PRINCIPLES OPTICS, P50

[6] METHOD FOR MEASURING THICKNESS OF EPITAXIAL SILICON FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (07) : 2395 - &

[7] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) : 544 - 553

[8] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +

[9] ANOMALOUS IMPURITY DIFFUSION IN EPITAXIAL SILICON NEAR THE SUBSTRATE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (11) : 1106 - 1108

[10] Moss TS., 1959, OPTICAL PROPERTIES S