DETERMINATION OF EPITAXIAL-LAYER IMPURITY DISTRIBUTION BY NEUTRON ACTIVATION METHOD

被引：10

作者：

ABE, T

SATO, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1965年 / 4卷 / 01期

关键词：

D O I：

10.1143/JJAP.4.70

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：70 / &

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[4] NISHI Y, TO BE PUBLISHED
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[6] IMPURITY DISTRIBUTION IN EPITAXIAL SILICON FILMS
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