GLASS SOURCE B DIFFUSION IN SI AND SIO2

被引：72

作者：

BROWN, DM

KENNICOTT, PR

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1971年 / 118卷 / 02期

关键词：

D O I：

10.1149/1.2408020

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：293 / +

页数：1

共 32 条

[1] OXIDE GLASSES IN LIGHT OF IDEAL GLASS CONCEPT .I. IDEAL AND NONIDEAL TRANSITIONS AND DEPARTURES FROM IDEALITY [J].

ANGELL, CA .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1968, 51 (03) :117-&

[2] DOPED OXIDES AS DIFFUSION SOURCES .I. BORON INTO SILICON [J].

BARRY, ML ;

OLOFSEN, P .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (06) :854-&

[3] SELF-REGISTERED MOLYBDENUM-GATE MOSFET [J].

BROWN, DM ;

ENGELER, WE ;

GARFINKEL, M ;

GRAY, PV .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (08) :874-+

[4] SI-SIO2 FAST INTERFACE STATE MEASUREMENTS [J].

BROWN, DM ;

GRAY, PV .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (07) :760-+

[5] A NEW MASKING TECHNIQUE FOR SEMICONDUCTOR PROCESSING [J].

BROWN, DM ;

ENGELER, WE ;

GARFINKE.M ;

HEUMANN, FK .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (07) :730-&

[6] REFRACTORY METAL SILICON DEVICE TECHNOLOGY [J].

BROWN, DM ;

ENGELER, WE ;

GARFINKEL, M ;

GRAY, PV .

SOLID-STATE ELECTRONICS, 1968, 11 (12) :1105-+

[7]

BUSEN KM, 1968, ELECTROCHEM TECHNOL, V6, P256

[8] ELLIPSOMETRIC INVESTIGATIONS OF BORON-RICH LAYERS ON SILICON [J].

BUSEN, KM ;

FITZGIBBONS, WA ;

TSANG, WK .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) :291-+

[9] METASTABLE IMMISCIBILITY IN B2O3-SIO2 SYSTEM [J].

CHARLES, RJ ;

WAGSTAFF, FE .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1968, 51 (01) :16-&

[10] PRELIMINARY INVESTIGATIONS OF THE SILICON BORIDE, SIB6 [J].

CLINE, CF .

NATURE, 1958, 181 (4607) :476-477

← 1 2 3 4 →