LASER ANNEALING OF ARSENIC IMPLANTED SILICON

被引：35

作者：

KRYNICKI, J

SUSKI, J

UGNIEWSKI, S

GROTZSCHEL, R

KLABES, R

KREISSIG, U

RUDIGER, J

机构：

[1] INST NUCL RES,PL-05400 SWIERK,POLAND

[2] ZENT INST KERNFORSCH,ROSSENDORF,GER DEM REP

来源：

关键词：

D O I：

10.1016/0375-9601(77)90286-9

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：181 / 182

页数：2

共 9 条

[1] CHAIBULLIN JB, 1975, P C ION IMPLANTATION, P212
[2] CHU WK, 1974, P C ION IMPLANTATION, P177
[3] Csepregi L., 1976, Radiation Effects, V28, P227, DOI 10.1080/00337577608237443
[4] GERASIMENKO NN, 1975, P C ION IMPLANTATION, P263
[5] IWAKI M, 1974, P C ION IMPLANTATION, P163
[6] KUTUKOVA OG, 1976, PHYS TECHNOL SEMICON, V10, P443
[7] DISLOCATION REACTIONS IN ARSENIC-IMPLANTED AND ANNEALED SILICON
MADER, S
MICHEL, AE
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 33 (02): : 793 - 805
[8] RESIDUAL LATTICE DAMAGE IN AS-IMPLANTED AND ANNEALED SI
MADER, S
MICHEL, AE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (01): : 391 - 395
[9] SHTYRKOV EI, 1975, P C ION IMPLANTATION, P247