DISLOCATION REACTIONS IN ARSENIC-IMPLANTED AND ANNEALED SILICON

[1] ANOMALOUS RESIDUAL DAMAGE IN SI AFTER ANNEALING OF THROUGH-OXIDE ARSENIC IMPLANTATIONS [J]. APPLIED PHYSICS LETTERS, 1973, 23 (05) : 268 - 270

[2] RESIDUAL DISORDER IN SI FROM OXYGEN RECOILS IN ANNEALED THROUGH OXIDE ARSENIC IMPLANTS [J]. APPLIED PHYSICS LETTERS, 1974, 25 (05) : 297 - 299

[3] DEARNALEY G, 1973, ION IMPLANTATION, pCH3

[4] Hirth J.P., 1982, THEORY DISLOCATIONS

[5] LOMER WM, 1951, PHILOS MAG, V42, P1327

[6] MICROSTRUCTURE OF XENON-IMPLANTED SILICON [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01): : 501 - 503

[7] MADER S, TO BE PUBLISHED

[8] RESIDUAL DEFECTS IN SI PRODUCED BY RECOIL IMPLANTATION OF OXYGEN [J]. APPLIED PHYSICS LETTERS, 1975, 26 (10) : 551 - 553

[9] RUHLE MR, 1972, RADIATION INDUCED VO, P255

[10] NATURE AND HABIT PLANES OF DEFECTS IN P+ ION-IMPLANTED SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 26 (01): : 345 - 352

[1] ANOMALOUS RESIDUAL DAMAGE IN SI AFTER ANNEALING OF THROUGH-OXIDE ARSENIC IMPLANTATIONS [J]. APPLIED PHYSICS LETTERS, 1973, 23 (05) : 268 - 270

[2] RESIDUAL DISORDER IN SI FROM OXYGEN RECOILS IN ANNEALED THROUGH OXIDE ARSENIC IMPLANTS [J]. APPLIED PHYSICS LETTERS, 1974, 25 (05) : 297 - 299

[3] DEARNALEY G, 1973, ION IMPLANTATION, pCH3

[4] Hirth J.P., 1982, THEORY DISLOCATIONS

[5] LOMER WM, 1951, PHILOS MAG, V42, P1327

[6] MICROSTRUCTURE OF XENON-IMPLANTED SILICON [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01): : 501 - 503

[7] MADER S, TO BE PUBLISHED

[8] RESIDUAL DEFECTS IN SI PRODUCED BY RECOIL IMPLANTATION OF OXYGEN [J]. APPLIED PHYSICS LETTERS, 1975, 26 (10) : 551 - 553

[9] RUHLE MR, 1972, RADIATION INDUCED VO, P255

[10] NATURE AND HABIT PLANES OF DEFECTS IN P+ ION-IMPLANTED SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 26 (01): : 345 - 352