RESIDUAL DEFECTS IN SI PRODUCED BY RECOIL IMPLANTATION OF OXYGEN

[1] ANOMALOUS RESIDUAL DAMAGE IN SI AFTER ANNEALING OF THROUGH-OXIDE ARSENIC IMPLANTATIONS [J]. APPLIED PHYSICS LETTERS, 1973, 23 (05) : 268 - 270

[2] RESIDUAL DISORDER IN SI FROM OXYGEN RECOILS IN ANNEALED THROUGH OXIDE ARSENIC IMPLANTS [J]. APPLIED PHYSICS LETTERS, 1974, 25 (05) : 297 - 299

[3] JOHNSON WS, 1969, PROJECTED RANGE STAT

[4] GROWTH OF HIGH-QUALITY EPITAXIAL SILICON OVER ION-IMPLANTED BURIED ARSENIC LAYERS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (10) : 1362 - 1366

[5] MOLINE RA, 1975, ATOMIC COLLISIONS SO, V1

[6] SEIDEL TE, 1974, P INT C LATTICE DEFE

[7] SIGMON TW, 1974, P INT C ION IMPLANTA

[1] ANOMALOUS RESIDUAL DAMAGE IN SI AFTER ANNEALING OF THROUGH-OXIDE ARSENIC IMPLANTATIONS [J]. APPLIED PHYSICS LETTERS, 1973, 23 (05) : 268 - 270

[2] RESIDUAL DISORDER IN SI FROM OXYGEN RECOILS IN ANNEALED THROUGH OXIDE ARSENIC IMPLANTS [J]. APPLIED PHYSICS LETTERS, 1974, 25 (05) : 297 - 299

[3] JOHNSON WS, 1969, PROJECTED RANGE STAT

[4] GROWTH OF HIGH-QUALITY EPITAXIAL SILICON OVER ION-IMPLANTED BURIED ARSENIC LAYERS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (10) : 1362 - 1366

[5] MOLINE RA, 1975, ATOMIC COLLISIONS SO, V1

[6] SEIDEL TE, 1974, P INT C LATTICE DEFE

[7] SIGMON TW, 1974, P INT C ION IMPLANTA