GROWTH OF HIGH-QUALITY EPITAXIAL SILICON OVER ION-IMPLANTED BURIED ARSENIC LAYERS

被引：9

作者：

MOLINE, RA

LIEBERMAN, R

SIMPSON, J

MACRAE, AU

机构：

[1] BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA

[2] BELL TEL LABS INC, WHIPPANY, NJ 07981 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1974年 / 121卷 / 10期

关键词：

D O I：

10.1149/1.2401688

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1362 / 1366

页数：5

共 11 条

[1]

BENSON KE, PRIVATE COMMUNICATIO

[2]

BICKNELL RW, 1971, ION IMPLANTATION, P63

[3] IMPLANTED PROFILES OF BORON, PHOSPHORUS AND ARSENIC IN SILICON FROM JUNCTION DEPTH MEASUREMENTS [J].

DAVIES, DE .

SOLID-STATE ELECTRONICS, 1970, 13 (02) :229-&

[4] ION IMPLANTATION OF SILICON .I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J].

DAVIES, JA ;

DENHARTO.J ;

ERIKSSON, L ;

MAYER, JW .

CANADIAN JOURNAL OF PHYSICS, 1967, 45 (12) :4053-&

[5]

DRUM CM, 1971, OCT INT EL DEV M WAS

[6]

MACRAE AU, 1971, 2 P INT C ION IMPL S, P329

[7]

MEIERAN ES, 1970, SIEMENS REV, V37, P39

[8]

MOLINE RA, 1973, 5 P INT C AT COLL SO

[9]

Morehead F. F. Jr., 1970, Radiation Effects, V6, P27, DOI 10.1080/00337577008235042

[10]

SIMPSON J, 1970, NBS337 SPEC PUBL, P87

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