RESIDUAL LATTICE DAMAGE IN AS-IMPLANTED AND ANNEALED SI

[1] ANOMALOUS RESIDUAL DAMAGE IN SI AFTER ANNEALING OF THROUGH-OXIDE ARSENIC IMPLANTATIONS [J]. APPLIED PHYSICS LETTERS, 1973, 23 (05) : 268 - 270

[2] CHIU TL, 1972, IBM J REV DEV, V15, P472

[3] RESIDUAL DISORDER IN SI FROM OXYGEN RECOILS IN ANNEALED THROUGH OXIDE ARSENIC IMPLANTS [J]. APPLIED PHYSICS LETTERS, 1974, 25 (05) : 297 - 299

[4] GIBBONS JF, 1975, PROJECTED RANGE STAT

[5] INTERACTION OF NONPARALLEL NONCOPLANAR DISLOCATIONS [J]. ACTA METALLURGICA, 1965, 13 (02): : 79 - &

[6] HIRSCH PB, 1965, ELECTRON MICROSCOPY

[7] HU SM, 1973, ATOMIC DIFFUSION SEM, pCH5

[8] MICROSTRUCTURE OF XENON-IMPLANTED SILICON [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01): : 501 - 503

[9] MADER S, IN PRESS

[10] ANNEALING PROPERTIES OF ION-IMPLANTED PARANORMAL JUNCTIONS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 2991 - 2996

[1] ANOMALOUS RESIDUAL DAMAGE IN SI AFTER ANNEALING OF THROUGH-OXIDE ARSENIC IMPLANTATIONS [J]. APPLIED PHYSICS LETTERS, 1973, 23 (05) : 268 - 270

[2] CHIU TL, 1972, IBM J REV DEV, V15, P472

[3] RESIDUAL DISORDER IN SI FROM OXYGEN RECOILS IN ANNEALED THROUGH OXIDE ARSENIC IMPLANTS [J]. APPLIED PHYSICS LETTERS, 1974, 25 (05) : 297 - 299

[4] GIBBONS JF, 1975, PROJECTED RANGE STAT

[5] INTERACTION OF NONPARALLEL NONCOPLANAR DISLOCATIONS [J]. ACTA METALLURGICA, 1965, 13 (02): : 79 - &

[6] HIRSCH PB, 1965, ELECTRON MICROSCOPY

[7] HU SM, 1973, ATOMIC DIFFUSION SEM, pCH5

[8] MICROSTRUCTURE OF XENON-IMPLANTED SILICON [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01): : 501 - 503

[9] MADER S, IN PRESS

[10] ANNEALING PROPERTIES OF ION-IMPLANTED PARANORMAL JUNCTIONS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 2991 - 2996