ANNEALING PROPERTIES OF ION-IMPLANTED PARANORMAL JUNCTIONS IN SILICON

[1] Bader R., 1970, Radiation Effects, V6, P211, DOI 10.1080/00337577008236299

[2] ANNEALING CHARACTERISTICS OF N-TYPE DOPANTS IN ION-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1969, 14 (10) : 313 - &

[3] DAVIDSON SM, 1971, 2ND P INT C ION IMPL, P79

[4] LATTICE LOCATION OF BORON IONS IMPLANTED INTO SILICON [J]. APPLIED PHYSICS LETTERS, 1970, 16 (08) : 313 - +

[5] METALLURGICAL PROPERTIES AND ELECTRICAL CHARACTERISTICS OF PALLADIUM SILICIDE-SILICON CONTACTS [J]. SOLID-STATE ELECTRONICS, 1971, 14 (06) : 507 - +

[6] MACDONALD C, 1970, RADIAT EFF, V6, P219

[7] MACPHERSON MR, 1971, APPL PHYS LETT, V18, P502, DOI 10.1063/1.1653513

[8] Morehead F. F. Jr., 1970, Radiation Effects, V6, P27, DOI 10.1080/00337577008235042

[9] MULLER H, 1971, 2 INT C ION IMPL SEM, P85

[10] TAMURA M, 1971, 2 P INT C ION IMPL S, P96

[1] Bader R., 1970, Radiation Effects, V6, P211, DOI 10.1080/00337577008236299

[2] ANNEALING CHARACTERISTICS OF N-TYPE DOPANTS IN ION-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1969, 14 (10) : 313 - &

[3] DAVIDSON SM, 1971, 2ND P INT C ION IMPL, P79

[4] LATTICE LOCATION OF BORON IONS IMPLANTED INTO SILICON [J]. APPLIED PHYSICS LETTERS, 1970, 16 (08) : 313 - +

[5] METALLURGICAL PROPERTIES AND ELECTRICAL CHARACTERISTICS OF PALLADIUM SILICIDE-SILICON CONTACTS [J]. SOLID-STATE ELECTRONICS, 1971, 14 (06) : 507 - +

[6] MACDONALD C, 1970, RADIAT EFF, V6, P219

[7] MACPHERSON MR, 1971, APPL PHYS LETT, V18, P502, DOI 10.1063/1.1653513

[8] Morehead F. F. Jr., 1970, Radiation Effects, V6, P27, DOI 10.1080/00337577008235042

[9] MULLER H, 1971, 2 INT C ION IMPL SEM, P85

[10] TAMURA M, 1971, 2 P INT C ION IMPL S, P96