SILICON EPITAXY BY SOLID-PHASE CRYSTALLIZATION OF DEPOSITED AMORPHOUS FILMS

被引：56

作者：

ROTH, JA ^{[1
]}

ANDERSON, CL ^{[1
]}

机构：

[1] HUGHES RES LABS,MALIBU,CA 90265

来源：

APPLIED PHYSICS LETTERS | 1977年 / 31卷 / 10期

关键词：

D O I：

10.1063/1.89506

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：689 / 691

页数：3

共 9 条

[1]

BOATRIGHT RL, 1976, J APPL PHYS, V47, P2260, DOI 10.1063/1.323015

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[5] CHANNELING EFFECT MEASUREMENTS OF RECRYSTALLIZATION OF AMORPHOUS SI LAYERS ON CRYSTAL SI [J].

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PHYSICS LETTERS A, 1975, 54 (02) :157-158

[6] SILICON HOMOEPITAXIAL THIN-FILMS VIA SILANE PYROLYSIS - HEED AND AUGER-ELECTRON SPECTROSCOPY STUDY [J].

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HELM, RF .

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[7]

JONA F, 1967, SURFACES INTERFACES

[8] GROWTH AND STRUCTURE OF SEMICONDUCTING THIN-FILMS [J].

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REPORTS ON PROGRESS IN PHYSICS, 1974, 37 (03) :363-+

[9] INFLUENCE OF IMPURITIES ON SURFACE STRUCTURES AND FAULT GENERATION IN HOMOEPITAXIAL SI(111) FILMS [J].

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