SOLID-PHASE TRANSPORT AND EPITAXIAL-GROWTH OF GE AND SI

被引：23

作者：

CANALI, C

MAYER, JW

OTTAVIANI, G

SIGURD, D

VANDERWE.W

机构：

[1] INST PHYS, 41100 MODENA, ITALY

[2] CALTECH, PASADENA, CA 91109 USA

来源：

关键词：

D O I：

10.1063/1.1655265

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3 / 5

页数：3

共 15 条

[1] BOSWELL JR, 1970, THIN SOLID FILMS, V6, P161
[2] BRODSKY MH, 1971, B AM PHYS SOC, V16, P304
[3] MEASUREMENT OF SOLUBILITY OF GERMANIUM IN ALUMINUM UTILIZING MEV HE+ BACKSCATTERING
CAYWOOD, JM
[J]. METALLURGICAL TRANSACTIONS, 1973, 4 (03): : 735 - 743
[4] HERD SR, 1972, J NONCRYSTAL SOLIDS, V7, P309, DOI DOI 10.1016/0022-3093(72)90267-0
[5] FORMATION OF SILICON OXIDE OVER GOLD LAYERS ON SILICON SUBSTRATES
HIRAKI, A
MAYER, JW
LUGUJJO, E
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (09) : 3643 - &
[6] Johannson N. G. E., 1970, SOLID STATE ELECTRON, V13, P317, DOI 10.1016/0038-1101(70)90183-8
[7] SOLID-PHASE EPITAXIAL-GROWTH OF GE LAYERS
MARRELLO, V
MAYER, JW
CAYWOOD, JM
NICOLET, MA
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 13 (02): : 531 - &
[8] DIFFUSIVITY AND SOLUBILITY OF SI IN AL METALLIZATION OF INTEGRATED CIRCUITS
MCCALDIN, JO
SANKUR, H
[J]. APPLIED PHYSICS LETTERS, 1971, 19 (12) : 524 - &
[9] MICROANALYSIS OF MATERIALS BY BACKSCATTERING SPECTROMETRY
NICOLET, MA
MITCHELL, IV
MAYER, JW
[J]. SCIENCE, 1972, 177 (4052) : 841 - &
[10] EFFECT OF DEPOSITED METALS ON CRYSTALLIZATION TEMPERATURE OF AMORPHOUS GERMANIUM FILM
OKI, F
OGAWA, Y
FUJIKI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (08) : 1056 - &