ANNEALING OF TE-IMPLANTED GAAS BY RUBY-LASER IRRADIATION

[1] ANTONENKO AK, 1976, SOV PHYS SEMICOND, V10, P265

[2] TELLURIUM IMPLANTATION IN GAAS [J]. SOLID-STATE ELECTRONICS, 1977, 20 (03) : 219 - 223

[3] EISEN FH, 1973, ION IMPLANTATION SEM, P631

[4] FOTI G, COMMUNICATION

[5] FOTI G, UNPUBLISHED

[6] INVESTIGATION OF LASER-INDUCED DIFFUSION AND ANNEALING PROCESSES OF ARSENIC-IMPLANTED SILICON-CRYSTALS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 41 (02): : K171 - K173

[7] KACHURIN GA, 1976, SOV PHYS SEMICOND, V9, P946

[8] LASER ANNEALING OF ARSENIC IMPLANTED SILICON [J]. PHYSICS LETTERS A, 1977, 61 (03) : 181 - 182

[9] KUTUKOVA OG, 1976, SOV PHYS SEMICOND+, V10, P265

[10] DOUBLE-LAYERED ENCAPSULANT FOR ANNEALING ION-IMPLANTED GAAS UP TO 1100DEGREESC [J]. APPLIED PHYSICS LETTERS, 1977, 31 (03) : 158 - 161

[1] ANTONENKO AK, 1976, SOV PHYS SEMICOND, V10, P265

[2] TELLURIUM IMPLANTATION IN GAAS [J]. SOLID-STATE ELECTRONICS, 1977, 20 (03) : 219 - 223

[3] EISEN FH, 1973, ION IMPLANTATION SEM, P631

[4] FOTI G, COMMUNICATION

[5] FOTI G, UNPUBLISHED

[6] INVESTIGATION OF LASER-INDUCED DIFFUSION AND ANNEALING PROCESSES OF ARSENIC-IMPLANTED SILICON-CRYSTALS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 41 (02): : K171 - K173

[7] KACHURIN GA, 1976, SOV PHYS SEMICOND, V9, P946

[8] LASER ANNEALING OF ARSENIC IMPLANTED SILICON [J]. PHYSICS LETTERS A, 1977, 61 (03) : 181 - 182

[9] KUTUKOVA OG, 1976, SOV PHYS SEMICOND+, V10, P265

[10] DOUBLE-LAYERED ENCAPSULANT FOR ANNEALING ION-IMPLANTED GAAS UP TO 1100DEGREESC [J]. APPLIED PHYSICS LETTERS, 1977, 31 (03) : 158 - 161