TELLURIUM IMPLANTATION IN GAAS

被引：27

作者：

EISEN, FH

WELCH, BM

MULLER, H

GAMO, K

INADA, T

MAYER, JW

机构：

[1] ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360

[2] CALTECH,PASADENA,CA 91109

来源：

SOLID-STATE ELECTRONICS | 1977年 / 20卷 / 03期

关键词：

D O I：

10.1016/0038-1101(77)90187-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：219 / 223

页数：5

共 17 条

[1] SILICON-ION-IMPLANTED AND SELENIUM-ION-IMPLANTED GAAS REPRODUCIBLY ANNEALED AT TEMPERATURES UP TO 950DEGREESC [J].

DONNELLY, JP ;

LINDLEY, WT ;

HURWITZ, CE .

APPLIED PHYSICS LETTERS, 1975, 27 (01) :41-43

[2]

EISEN FH, 1975, APPLICATIONS ION BEA, P64

[3]

EISEN FH, 1973, ION IMPLANTATION SEM, P631

[4] EFFICIENT DOPING OF GAAS BY SE+ ION IMPLANTATION [J].

FOYT, AG ;

DONNELLY, JP ;

LINDLEY, WT .

APPLIED PHYSICS LETTERS, 1969, 14 (12) :372-&

[5] SELENIUM IMPLANTATION IN GAAS [J].

GAMO, K ;

INADA, T ;

KREKELER, S ;

MAYER, JW ;

EISEN, FH ;

WELCH, BM .

SOLID-STATE ELECTRONICS, 1977, 20 (03) :213-217

[6]

GIBBONS JF, 1975, PROJECTED RANGE STAT

[7] INFLUENCE OF IMPLANTATION TEMPERATURE AND SURFACE PROTECTION ON TELLURIUM IMPLANTATION IN GAAS [J].

HARRIS, JS ;

MAYER, JW ;

EISEN, FH ;

HASKELL, JD ;

WELCH, B ;

PASHLEY, RD .

APPLIED PHYSICS LETTERS, 1972, 21 (12) :601-&

[8]

Heckingbottom R., 1973, RADIAT EFF, V17, P31

[9]

HEMMENT PLF, 1975, ION IMPLANTATION SEM, P27

[10] PERFORMANCE OF SULFUR-ION-IMPLANTED GAAS FETS [J].

HIGGINS, JA ;

WELCH, BM ;

EISEN, FH ;

ROBINSON, GD .

ELECTRONICS LETTERS, 1976, 12 (01) :17-18

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