SELENIUM IMPLANTATION IN GAAS

被引：45

作者：

GAMO, K

INADA, T

KREKELER, S

MAYER, JW

EISEN, FH

WELCH, BM

机构：

[1] CALTECH,PASADENA,CA 91109

[2] ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360

来源：

SOLID-STATE ELECTRONICS | 1977年 / 20卷 / 03期

关键词：

D O I：

10.1016/0038-1101(77)90186-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：213 / 217

页数：5

共 22 条

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BUIOCCHI, CJ ;

TIETJEN, JJ .

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[2] ORIGIN OF NON-GAUSSIAN PROFILES IN PHOSPHORUS-IMPLANTED SILICON [J].

BLOOD, P ;

DEARNALEY, G ;

WILKINS, MA .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (12) :5123-5128

[3] SILICON-ION-IMPLANTED AND SELENIUM-ION-IMPLANTED GAAS REPRODUCIBLY ANNEALED AT TEMPERATURES UP TO 950DEGREESC [J].

DONNELLY, JP ;

LINDLEY, WT ;

HURWITZ, CE .

APPLIED PHYSICS LETTERS, 1975, 27 (01) :41-43

[4] TELLURIUM IMPLANTATION IN GAAS [J].

EISEN, FH ;

WELCH, BM ;

MULLER, H ;

GAMO, K ;

INADA, T ;

MAYER, JW .

SOLID-STATE ELECTRONICS, 1977, 20 (03) :219-223

[5]

EISEN FH, 1975, APPLICATIONS ION BEA, P64

[6]

EISEN FH, 1973, ION IMPLANTATION SEM, P631

[7] ENHANCED DIFFUSION AND LATTICE LOCATION OF INDIUM AND GALLIUM IMPLANTED IN SILICON [J].

GAMO, K ;

IWAKI, M ;

MASUDA, K ;

NAMBA, S ;

ISHIHARA, S ;

KIMURA, I ;

MITCHELL, IV ;

ILIC, G ;

WHITTON, JL ;

DAVIES, JA .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (05) :735-741

[8]

GAMO K, UNPUBLISHED DATA

[9] EFFECTS OF DEGENERACY ON DOPING EFFICIENCY FOR N-TYPE IMPLANTS IN GAAS [J].

GIBBONS, JF ;

TREMAIN, RE .

APPLIED PHYSICS LETTERS, 1975, 26 (04) :199-201

[10]

GIBBONS JF, 1975, PROJECTED RANGE STAT

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