ENHANCED DIFFUSION AND LATTICE LOCATION OF INDIUM AND GALLIUM IMPLANTED IN SILICON

被引：18

作者：

GAMO, K

IWAKI, M

MASUDA, K

NAMBA, S

ISHIHARA, S

KIMURA, I

MITCHELL, IV

ILIC, G

WHITTON, JL

DAVIES, JA

机构：

[1] OSAKA UNIV,FAC ENGN SCI,DEPT ELECT ENGN,TOYONAKA,OSAKA,JAPAN

[2] KYOTO UNIV,RES REACTOR INST,SENNAN,OSAKA,JAPAN

[3] ATOM ENERGY CANADA LTD,CHALK RIVER NUCL LABS,CHALK RIVER,ONTARIO,CANADA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1973年 / 12卷 / 05期

关键词：

D O I：

10.1143/JJAP.12.735

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：735 / 741

页数：7

共 15 条

[1]

BOWER RW, 1966, APPL PHYS LETTERS, V9, P1631

[2]

CORBETT JW, 1966, ELECTRON RADIATION D

[3] ION IMPLANTATION OF SILICON .I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J].

DAVIES, JA ;

DENHARTO.J ;

ERIKSSON, L ;

MAYER, JW .

CANADIAN JOURNAL OF PHYSICS, 1967, 45 (12) :4053-&

[4] ANOMALOUS PENETRATION OF XENON IN TUNGSTEN CRYSTALS-A DIFFUSION EFFECT [J].

DAVIES, JA ;

JESPERSGARD, P .

CANADIAN JOURNAL OF PHYSICS, 1966, 44 (07) :1631-+

[5]

DEARNALEY G, 1971, 2 P INT C ION IMPL S, P439

[6] RADIATION ENHANCED DIFFUSION IN SOLIDS [J].

DIENES, GJ ;

DAMASK, AC .

JOURNAL OF APPLIED PHYSICS, 1958, 29 (12) :1713-1721

[7] IMPLANTATION AND ANNEALING BEHAVIOR OF GROUP 3 AND V DOPANTS IN SILICON AS STUDIED BY CHANNELING TECHNIQUE [J].

ERIKSSON, L ;

DAVIES, JA ;

JOHANSSON, NG ;

MAYER, JW .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (02) :842-+

[8]

Fladda G., 1969, Radiation Effects, V1, P249, DOI 10.1080/00337576908235567

[9] ENHANCED DIFFUSION OF HIGH-TEMPERATURE ION-IMPLANTED ANTIMONY INTO SILICON [J].

GAMO, K ;

MASUDA, K ;

NAMBA, S .

APPLIED PHYSICS LETTERS, 1970, 17 (09) :391-+

[10] INFLUENCE OF TEMPERATURE ON PHOSPHORUS ION BEHAVIOR DURING SILICON BOMBARDMENT [J].

GLOTIN, PM .

CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) :705-&

← 1 2 →