ENHANCED DIFFUSION OF HIGH-TEMPERATURE ION-IMPLANTED ANTIMONY INTO SILICON

被引：17

作者：

GAMO, K

MASUDA, K

NAMBA, S

机构：

来源：

APPLIED PHYSICS LETTERS | 1970年 / 17卷 / 09期

关键词：

D O I：

10.1063/1.1653449

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：391 / +

页数：1

共 13 条

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[7] ENHANCED DIFFUSION OF ION IMPLANTED SB IN SILICON [J].

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[8] ION IMPLANTATION IN SEMICONDUCTORS .I. RANGE DISTRIBUTION THEORY AND EXPERIMENTS [J].

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[9] DOPING OF SILICON BY ION IMPLANTATION [J].

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[10]

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