ORIGIN OF NON-GAUSSIAN PROFILES IN PHOSPHORUS-IMPLANTED SILICON

被引：22

作者：

BLOOD, P

DEARNALEY, G

WILKINS, MA

机构：

[1] MULLARD RES LABS,REDHILL,SURREY,ENGLAND

[2] ATOMIC ENERGY RES ESTAB,NUCL PHYS DIV,HARWELL,OXFORDSHIRE,ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 12期

关键词：

D O I：

10.1063/1.1663203

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5123 / 5128

页数：6

共 19 条

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DEARNALEY, G ;

WILKINS, MA .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1974, 21 (04) :245-251

[2]

BLOOD P, 1973, ION IMPLANTATION SEM, P75

[3]

BRICE DK, 1971, SCRR710599 SAND LAB

[4] IMPLANTATION PROFILES OF 32P CHANNELED INTO SILICON CRYSTALS [J].

DEARNALEY, G ;

FREEMAN, JH ;

GARD, GA ;

WILKINS, MA .

CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) :587-+

[5]

Dearnaley G., 1970, Atomic collision phenomena in solids, P633

[6]

DEARNALEY G, 1970, J SCI INSTRUM, V44, P880

[7]

DEARNALEY G, 1971, 2 P INT C ION IMPL S, P439

[8]

Eisen F. H., 1972, Radiation Effects, V13, P93, DOI 10.1080/00337577208231165

[9] ENHANCED DIFFUSION AND LATTICE LOCATION OF INDIUM AND GALLIUM IMPLANTED IN SILICON [J].

GAMO, K ;

IWAKI, M ;

MASUDA, K ;

NAMBA, S ;

ISHIHARA, S ;

KIMURA, I ;

MITCHELL, IV ;

ILIC, G ;

WHITTON, JL ;

DAVIES, JA .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (05) :735-741

[10]

Hofker W. K., 1973, ION IMPLANTATION SEM, P133

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